Keywords: Carbon nanotube field effect transistors (CNTFET), fully Depleted Silicon on Insulator (FDSOI), Insulated gate filed effect transistor (IGFET)


As the technology moving towards lower voltage for high stability and accurate performance. We design low voltage current mirror using IGFET, FDSOI, CNTFET.These transistor moving towards low-voltage high-speed performance. Here in this paper, we have design low voltage current mirror for Accurate duplication of current. To obtain accurate duplication of current we verify the performance of low voltage current mirror on FDSOI and CNTFET Transistor having 32nm technology.

The circuit is simulated with 32nm technology for FDSOI and CNFET. They operate at lower power supply than IGFET. The simulation results show the improvement in knee voltage 1.7v and 1.3v for the current mirror.

Author Biography

Avinash Sukadeo Pawar, Pravara Rural Engineering College , LONI , Savitribai Phule, Pune University
Assistant Professor at Bharat College of Engineering, Badlapur, Thane Mumbai


[1] Minghong Li, H.L. Kwok ‘’The Application of Current-mode Circuits in the Design of an A/D Converter ‘’ Electrical and Computer Engineering, 1998. IEEE Canadian Conference on, Volume 1, 24-28 May 1998Page(s):41 – 44


[3] Kuo-Hsing Cheng, Chi-Che Chen and Chun-Fu Chung ‘’AccurateCurrent Mirror with High Output Impedance’’ Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference, Volume 2, 2-5 Sept. 2001 Page(s):565 – 568

[4] Kuo-Hsing Cheng', Tsung-Shen Chen2, and Ching-Wen Kuo ‘’High accuracy current mirror with low settling time’’ Circuits and Systems, 2003. MWSCAS '03. Proceedings of the 46th IEEE International Midwest Symposium, Volume 1, 27-30 Dec. 2003 Page(s):189 – 192 Vol. 1

[5] Milind Subhash Sawant, Jaime Ramirez-Angulo, Antonio. J. Lopez- Martin and Ramon G. Carvajal ‘’ New compact implementation of a very high performance CMOS current mirror’’ circuits and systems, 2005.48th Midwest Symposium, 7-10 Aug. 2005 pp. 840-842

[6] D. Markovic, C.C.Wang, L.P.Alarcon,T.-T.Liu, J.M.Rabaey, “Ultra low- power design in near threshold region,” Proc. IEEE, Vol. 98, no. 2, pp. 237–252, 2010.

[7] S. Chandra, A. Raghunathan, S. Dey, “Variation-aware voltage level selection,” IEEE Trans.VLSI Syst, Vol. 20, no. 5 pp. 925–936, 2012.

[8] Jie Deng and H.-S.Philip Wong. A compact spice model for carbon-nanotube field-effect transistors including nonidealities and its application - part i: model of the intrinsic channel region. IEEE Transactions on Electron Devices, 54:3186–3194, 2007.

[9] T. Dang , I. Anghel , and R. leveugle , “ CNTFET Basics and Simulation”, IEEE International conference on Design and Test of Integrated Systems in Nanoscale Technology (DTIS), Tunis, Tunisia, pp. 28-33, September, 5-7, 2006.

[10] J. Guo, S. Datta, M. Lundstrom, “Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors”, IEDM, pp. 711-715, 2002.

[11] Appenzeller "Carbon Nanotubes for High-Performance ElectronicsProgress and Prospect," Proc. IEEE, Volume 96, Issue 2, pp. 201 - 211, Feb. 2008.

[12] COLINGE J P. “Silicon on insulator technology: materials to VLSI”. 2nd ed. Norwell, MA: Kluwer: Kluwer Academic Publishers; 1997.

[13] Guegan, G., Gwoziecki, R., Touret, P., Raynaud, C., Deleonibus, S., Pretet, J., Gonnard, O., Gouget, G., "New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate", Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European, On page(s): 59 – 62.

[14] Mercha, A., Rafi, J.M., Simoen, E., Augendre, E., Claeys, C., "Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide
bulk and SOI MOSFETS", Electron Devices, IEEE Transactions on, On page(s): 1675 - 1682 Volume: 50, Issue: 7, July 2003.

[15] Behzad Razavi, Design of CMOS Analog Integrated Ckts, Mc-Graw Hill College, 2001.
How to Cite
Pawar, A. (2017) “DESIGN LOW VOLTAGE CURRENT MIRROR AT 32NM REGIME”, International Journal of Students’ Research in Technology & Management, 5(1), pp. 16-20. doi:
Electrical Engineering